期刊
ACS PHOTONICS
卷 1, 期 12, 页码 1245-1250出版社
AMER CHEMICAL SOC
DOI: 10.1021/ph500153c
关键词
InP photovoltaics; titanium dioxide; heterojunctions; selective contact
类别
资金
- Bay Area Photovoltaics Consortium (BAPVC)
- Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
- China Scholarship Council (CSC)
- Zeno Karl Schindler Foundation
We demonstrate an InP heterojunction solar cell employing an ultrathin layer (similar to 10 nm) of amorphous TiO2 deposited at 120 degrees C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 303 mA/cm(2) and a high power conversion efficiency of 19.2%.
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