期刊
NANOSCALE RESEARCH LETTERS
卷 9, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-9-452
关键词
Total ionizing dose (TID) effects; gamma ray radiation; RRAM; Hybrid filament model; Filament; Radiation-induced holes
资金
- State Key Development Program for Basic Research of China [2011CBA00602]
- National Natural Science Foundation of China [20111300789]
The total ionizing dose (TID) effects of Co-60 gamma ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO (x) /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO (x) /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.
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