期刊
NANOSCALE RESEARCH LETTERS
卷 9, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-9-268
关键词
Resistive switching; Thin film; Interface; Indium tin oxide substrate
资金
- Open Project of the State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials [11zxfk26]
- Fundamental Research Funds for the Central Universities [ZYGX2012J032]
- Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201307]
This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after electroforming with low and high CC of 1 and 3 mA, respectively, which is contrary to previous reports. Furthermore, in the case of high-forming CC, TRS is observed after several switching cycles with a low-switching CC. Analysis of current-voltage relationship demonstrates that Poole-Frenkel conduction controlled by localized traps should be responsible for the resistance switching. The unique behaviors can be dominated by Joule heating filament mechanism in the dual-oxygen reservoir structure composed of Al/NiO interfacial layer and ITO. The tunable switching properties can render it flexible for device applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据