期刊
NANOSCALE RESEARCH LETTERS
卷 8, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-8-49
关键词
Boron nitride; Exfoliation; Fluorination; Electrical conductivity
资金
- National Natural Science Foundation of China [21171035]
- Science and Technology Commission of Shanghai-based 'Innovation Action Plan' Project [10JC1400100]
- Ph.D. Programs Foundation of Ministry of Education of China [20110075110008]
- Key Grant Project of Chinese Ministry of Education [313015]
- Shanghai Rising-Star Program [11QA1400100]
- Fundamental Research Funds for the Central Universities
- Shanghai Leading Academic Discipline Project [B603]
- Program of Introducing Talents of Discipline to Universities [111-2-04]
The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据