期刊
NANOSCALE RESEARCH LETTERS
卷 7, 期 -, 页码 1-7出版社
SPRINGER
DOI: 10.1186/1556-276X-7-482
关键词
CdS quantum dot; photoluminescence; quantum efficiency; local strain; relaxation
资金
- National Research Foundation of Korea through the World Class University (WCU) [R31-2008-000-10075-0]
- Korean government (MEST:NRF) [2010-0029065]
- National Research Foundation of Korea [R31-2012-000-10075-0, 2010-0029066] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency a parts per thousand...aEuro parts per thousand 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency a parts per thousand...aEuro parts per thousand 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process.
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