3.8 Article

Photoluminescence enhancement in CdS quantum dots by thermal annealing

期刊

NANOSCALE RESEARCH LETTERS
卷 7, 期 -, 页码 1-7

出版社

SPRINGER
DOI: 10.1186/1556-276X-7-482

关键词

CdS quantum dot; photoluminescence; quantum efficiency; local strain; relaxation

资金

  1. National Research Foundation of Korea through the World Class University (WCU) [R31-2008-000-10075-0]
  2. Korean government (MEST:NRF) [2010-0029065]
  3. National Research Foundation of Korea [R31-2012-000-10075-0, 2010-0029066] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency a parts per thousand...aEuro parts per thousand 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency a parts per thousand...aEuro parts per thousand 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process.

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