期刊
NANOSCALE RESEARCH LETTERS
卷 7, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/1556-276X-7-639
关键词
AZO; GZO; Transparent conducting oxide; Thin films; Spin-coating
资金
- New and Renewable Energy Project of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Korean government's Ministry of Knowledge Economy [20103030010040]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20103030010040] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol-gel spin-coating process. As a starting material, AlCl(3)a <...6H(2)O, Ga(NO3)(2), and Zn(CH3COO)(2)a <...2H(2)O were used. A lowest sheet resistance of 3.3 x 10(3) abroken vertical bar/a- was obtained for the GZO thin film doped with 1.5 mol% of Ga after post-annealing at 650A degrees C for 60 min in air. All the films showed more than 85% transparency in the visible region. We have studied the structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis. In addition, the optical bandgap and photoluminescence were estimated.
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