期刊
NANOSCALE RESEARCH LETTERS
卷 7, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-7-344
关键词
Fluoropolymer; Fluorocarbon polymer; Porous silicon localization; Chemical resistance; Inert masking layer
The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p(+)-type and low-doped n-type silicon substrates.
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