期刊
NANOSCALE RESEARCH LETTERS
卷 7, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-7-562
关键词
beta-Ga2O3/wurtzite GaN heterostructure; Band offset; X-ray photoelectron spectroscopy
资金
- National Key Basic R&D Plan (973 Project) of China [2012CB619301, 2012CB619306]
A sample of the beta-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the beta-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the beta-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the beta-Ga2O3/GaN structure is 1.40 +/- 0.08 eV.
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