期刊
NANOSCALE RESEARCH LETTERS
卷 7, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/1556-276X-7-117
关键词
-
资金
- Scientific Research Starting Foundation for Outstanding talent, University of Electronic Science and Technology of China
Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/mu m were obtained at anode-cathode separations of 100 to 200 mu m. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/mu m. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters.
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