3.8 Article

Growth kinetics of MPS-capped CdS quantum dots in self-assembled thin films

期刊

NANOSCALE RESEARCH LETTERS
卷 7, 期 -, 页码 -

出版社

SPRINGEROPEN
DOI: 10.1186/1556-276X-7-610

关键词

CdS quantum dots; 3-Mercaptopropyltrimethoxysilane; Growth kinetics; Ostwald ripening; Thin films

资金

  1. Istanbul Technical University

向作者/读者索取更多资源

For this study, we prepared colloidal CdS quantum dots using 3-mercaptopropyltrimethoxysilane as capping agent. Colloidal CdS quantum dots were directly deposited on glass substrates by a spin-coating process. Coated substrates were heat-treated between 225A degrees C and 325A degrees C for various heat treatment time intervals to investigate the growth kinetics of the quantum dots. Results showed that sizes of the CdS quantum dots grew approximately from 2.9 to 4.6 nm, and the E (1s1s) energy values shifted approximately from 3.3 to 2.7 eV. Results showed that the average size of quantum dots increase by thermal treatment due to Ostwald ripening. The thermal process used to grow the size of quantum dots was examined according to the Lifshitz-Slyozov-Wagner theory. The activation energy of CdS quantum dots in thin films was calculated at approximately 44 kJ/mol.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

3.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据