期刊
NANOSCALE RESEARCH LETTERS
卷 6, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/1556-276X-6-635
关键词
InAs/GaSb; type II superlattice; photodiodes; infrared
We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 x 10(-4). The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 mu m. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 x 10(11) cmHz(1/2)/W and the quantum efficiency of 41% at 3.6 mu m were obtained.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据