期刊
NANOSCALE RESEARCH LETTERS
卷 6, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-6-599
关键词
Au/SrTiO3/Ti; bipolar resistance switching; Schottky barrier
资金
- National Natural Science Foundation of China [60976016]
- Specialized Research Fund for the Doctoral Program of Higher Education [20094103110001]
Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.
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