期刊
NANOSCALE RESEARCH LETTERS
卷 6, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/1556-276X-6-277
关键词
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资金
- National Research Foundation of Korea (NRF) [20090093823]
- Ministry of Education, Science
- Ministry of Education, Science and Technology [2010-0019313]
- National Research Foundation of Korea [2009-0093823, 15-2008-05-002-00, 2010-0019459] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.
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