期刊
NANOMATERIALS AND NANOTECHNOLOGY
卷 4, 期 -, 页码 -出版社
SAGE PUBLICATIONS LTD
DOI: 10.5772/58317
关键词
Nanowires; Epitaxial Growth; Dopant
资金
- Defense Advanced Research Project Agency (DARPA) [N66001-08-1-2037]
We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical < 111 > direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical < 111 > direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.
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