4.8 Article

Enhanced thermoelectric properties of n-type Bi2Te2.7Se0.3 thin films through the introduction of Pt nanoinclusions by pulsed laser deposition

期刊

NANO ENERGY
卷 8, 期 -, 页码 223-230

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2014.06.011

关键词

Thermoelectric; Bi2Te2.7Se0.3; Thin film; Nanoinclusion; Pulsed laser deposition

资金

  1. Future Systems and Technology Directorate, Singapore [9010100257]

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This work demonstrates the first preparation of textured n-type Bi2Te2.7Se0.3 thin films with content-adjustable Pt nanoinclusions by pulsed laser deposition. Characterization results reveal that metallic Pt nanoinclusions are embedded in the semiconductor matrix at grain boundaries. Addition of Pt nanoinclusions results in a higher in-plane power factor based on the simultaneous increase in electrical conductivity and absolute Seebeck coefficient. Power factor of the optimized nanocomposite thin film reaches 3.51 x 10(-3) W/mK(2) at room temperature, which is a more than 20% enhancement as compared to the single phase Bi2Te2.7Se0.3 thin film. An even greater improvement in the in-plane ZT can be expected from a reduced thermal conductivity, as indicated by cross-plane thermal property measurement. This work highlights the feasibility of combining nanoconnposite engineering with textured thin films to further improve thermoelectric performance. (C) 2014 Elsevier Ltd. All rights reserved.

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