A self-powered solar-blind photodetector based on a MoS2/beta-Ga2O3 heterojunction

High-performance solar-blind photodetectors have attracted significant attention due to their great significance in military and industrial applications. In this work, a high-performance selfpowered solar-blind photodetector based on a MoS2/beta-Ga2O3 heterojunction was demonstrated. The photodetector exhibits a remarkable rectifying characteristic with a rectification ratio over 10(5) and excellent solar-blind photoresponse properties with a cutoff wavelength of 260 nm and a high rejection ratio of 1.6 x 10(3). Under light illumination of 245 nm (20.1 mu W cm(-2)), the MoS2/beta-Ga2O3 heterojunction photodetector shows a responsivity of 2.05 mA W-1 and a specific detectivity of 1.21 x 10(11) Jones at zero bias voltage. Such high-performances of this photodetector are superior to other previously reported beta-Ga2O3 based photodetectors, and provide a guideline to design high-performance selfpowered solar-blind photodetectors.