期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 6, 期 42, 页码 11255-11260出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc04477e
关键词
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资金
- National Natural Science Foundation of China [51702102, 51577070]
- National Science Fund for Excellent Young Scholars of China [51422203]
- Natural Science Foundation for Doctor Scientific Research Start of Guangdong Province [2017A030310518]
- National Defense Scientific and Technological Innovation Special Zone [17-163-13-ZT-008-029-04]
- China Postdoctoral Science Foundation [2018T110867, 2017M610520]
- National Natural Science Foundation Major Instrument Special Project of China [51727901]
High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection. By designing the epitaxial structures with a continuously Al-composition-graded AlGaN interlayer between an Al0.30Ga0.70N layer and an Al0.15Ga0.85N layer, the dislocation density in epitaxial films has been greatly reduced, and high-quality GaN epitaxial films grown on Si substrates with full-widths at half-maximum for GaN(0002) and GaN(10-12) X-ray rocking curves of 260 and 280 arcsec, respectively, have been obtained. Furthermore, by applying an electron blocking layer with 8 periods of AlInGaN/GaN superlattices, both electron confinement and hole injection have been enhanced accordingly. High-performance vertical GaN-based 395 nm UV LED chips show a high light output power of 535 mW and a low forward voltage of 3.10 V at a current of 350 mA, corresponding to a high wall-plug efficiency of 49.3%, which are the best values for GaN-based 395 nm UV LEDs ever reported. These high-performance near-UV LED chips find application in medical curing, lighting, etc.
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