期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 6, 期 31, 页码 8479-8487出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc02700e
关键词
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资金
- National Key Research and Development Program of China [2017YFA0403803]
- National Natural Science Foundation of China [51774065, 51525401, 51690163, 51601028, 11404050]
- Dalian Support Plan for Innovation of High-level Talents [2015R013]
Herein, we propose for the first time a novel recipe to improve the thermoelectric properties of BiCuSeO by doping with variable valence elements. Taking Yb-doped BiCuSeO as a typical example, the dimensionless figure of merit (ZT) is optimized by simultaneously doping with Yb2+ to increase the carrier concentration and by introducing Yb3+ to increase the carrier mobility. The mechanisms of valence fluctuation, the increase in carrier concentration and the increase in mobility are investigated by combining experimental results with first-principles calculations. By coupling high electronic conductivity, medium Seebeck coefficient, and low thermal conductivity, a maximum ZT value of 0.62 is achieved at 823 K for Bi0.7Yb0.3CuSeO, which is 1.55 times higher than that of pristine BiCuSeO. These findings undoubtedly provide a new strategy for the rational design of high-ZT thermoelectric materials.
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