期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 2, 期 10, 页码 1808-1814出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc32059f
关键词
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资金
- National Natural Science Foundation of China [51162023, 21263013, 51002073, 21001062]
- Project for Young Scientist Training of Jiangxi Province [20133BCB23002]
- Natural Science Foundation of Jiangxi Province [20132BAB206005]
- Foundation of Jiangxi Educational Committee [GJJ13058]
ZnO and Zn2SnO4 nanowires (NWs) have relatively high sensitivities as ultraviolet (UV) photodetectors, while their bandgaps are an important limitation in their applications in the visible (VIS) and near-infrared (NIR) ranges. In this paper, we demonstrate the promising applications of Ohmic contacted individual Zn2SnO4-sheathed ZnO core/shell radial heterostructured NWs as high performance solar blind UV-VIS-NIR photodetectors with a relatively high sensitivity, stability, and reproducibility. The dominant mechanism for the excellent photoconductivity is attributed to the presence of interface states in the II-type heterostructure, which prevents the movement of charge at the heterointerface. Upon applying a negative bias voltage at one end of the detector, where the interface states will be filled, potential barriers will decrease and be eliminated. Therefore, photogenerated electron-hole pairs will be separated efficiently and electrons can migrate towards the Zn2SnO4 shell, resulting in a huge decrease in shell resistance. The absorption of the heterointerface and charged oxygen vacancies (V(O)(+)and V-O(++)) in the depletion region can induce VIS and NIR photoresponses. These results demonstrate that individual heterostructured NWs composed of wide bandgap semiconductors can indeed serve as high-performance photodetectors in the solar blind UV-VIS-NIR range.
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