4.6 Article

High performance ambipolar organic field-effect transistors based on indigo derivatives

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 2, 期 43, 页码 9311-9317

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4tc01563k

关键词

-

资金

  1. Ministry of Education, Culture, Sports, Science, and Technology of Japan [23350061]
  2. Grants-in-Aid for Scientific Research [23350061, 13J02780] Funding Source: KAKEN

向作者/读者索取更多资源

A bio-inspired organic semiconductor 5,5'-diphenylindigo shows excellent and well-balanced ambipolar transistor properties; its hole and electron mobilities are 0.56 and 0.95 cm(2) V-1 s(-1), respectively. The enhanced performance is attributed to the extended pi-pi overlap of the phenyl groups as well as the characteristic packing pattern that is a hybrid of the herringbone and brickwork structures. The ambipolar transistor characteristics are analyzed considering its operating regions, where a large unipolar saturated region appears due to the difference of the electron and hole threshold voltages.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据