期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 2, 期 27, 页码 5382-5388出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4tc00622d
关键词
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资金
- NSFC [51103018, 51273036, 61376074, 51272238, 512731926, 51322305, 61261130092]
- Ministry of Science and Technology of China [2012CB933703]
- 111 Project [B13013]
- National Excellent Doctoral Dissertation Award from China [201024]
- Program for New Century Excellent Talents of Ministry of Education [NCET-10-317]
- Fundamental Research Funds for the Central Universities [11CXPY001, 12SSXM001]
The high ON/OFF ratios of organic single crystal field-effect transistors (FETs) are obtained based on dinaphtho[3,4-d:3',4'-d']benzo[1,2-b:4,5-b']dithiophene (Ph5T2) ultrathin microplates. The ON/OFF ratio is over 108 with a small sweep range of gate voltage (<45 V) in air at room temperature when the dielectric is modified with octadecyltrichlorosilane (OTS). The high ON/OFF ratio is related to the decreased off-state current by molecular design and the increased on-state current by dielectric modification. The ON/OFF ratio up to 1.3 x 10(7) can also be realized on a flexible transparent substrate. The ultrathin Ph5T2 single crystal provides stable performance even though the flexible device experiences a bending/recovering test for 200 times. The high ON/OFF ratio combined with the high mobility up to 0.51 cm(2) V-1 s(-1) and the good flexibility of the ultrathin organic single crystals show their promising potential in electronic applications.
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