期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 2, 期 42, 页码 8892-8902出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4tc01454e
关键词
-
资金
- National Science Council, Taiwan, Republic of China [NSC102-2923-M-008-004-MY2, NSC101-2113-M-001-006-MY3, NSC 100-2113-M-001-005-MY3]
- National Research Foundation of Korea [NRF-2013K2A1B8048388]
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT & Future Planning [2013M3A6A5073175]
New asymmetric phenyl and perfluorophenyl end-functionalized dithienothiophene (DTT)- and bisdithienothiophene (BDTT)-based fused-thiophene derivatives (FPP-DTT; 1 and FPP-BDTT; 3) were synthesized and characterized for organic thin-film transistor (OTFT) applications. For comparison, symmetric phenyl end-capped dithienothiophene and bisdithienothiophene derivatives DP-DTT (2) and DP-BDTT (4) were also explored in parallel. The crystal structures of all four molecules were determined via single-crystal X-ray diffraction. Asymmetric compounds 1 and 3 exhibit face-to-face pi-pi stacking, while symmetric 2 and 4 show herringbone stacking. Single-crystal and thin-film transistors based on these four materials were fabricated. For single-crystal transistors, asymmetric FPP-DTT and FPP-BDTT gave high p-channel mobilities of 0.74 and 0.73 cm(2) V-1 s(-1), respectively, as well as current on/off ratios of similar to 10(5). Symmetric DP-DTT and DP-BDTT gave relatively lower p-channel mobilities of 0.36 and 0.41 cm(2) V-1 s(-1), respectively. For thin-film transistors, FPP-DTT and DP-DTT films deposited at 25 degrees C exhibited decent p-channel characteristics with a carrier mobility as high as 0.15 and 0.20 cm(2) V-1 s(-1), respectively for top-contact/bottom-gate OTFT devices. The device characteristics on various gate dielectrics have been correlated with the film morphologies and microstructures of the corresponding compounds.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据