期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 1, 期 44, 页码 7333-7338出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc31444h
关键词
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资金
- National Science Foundation [NSF CBET1236155, ECCS0901113]
- Qualcomm Institute (QI)
- QI and NANO3 facilities (UCSD)
We studied the thin film heterojunction photodiode made of nickel oxide (NiO) and zinc oxide (ZnO) deposited by low cost energy-efficient sol-gel spin coating. The highly visible-transparent heterojunction photodiode with a smooth interface gives rise to a good photoresponse and quantum efficiency under ultra-violet (UV) light illumination. With an applied reverse bias of 5 V, a very impressive peak photo responsivity of 21.8 A W-1 and an external quantum efficiency (EQE) of 88% at an incident light wavelength of 310 nm were accomplished.
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