期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 1, 期 24, 页码 3777-3783出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc30504j
关键词
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资金
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2011-0029858, NRF-2009-C1AAA001-2009-0092950]
- NCRC [R15-2008-006-02001-01]
- Bio Imaging Research Center at GIST
- Korea Institute of Science and Technology (KIST) Institutional Program
The work-function of MoS2 interfacial layers can be efficiently modulated by p-and n-doping treatments. As a result, the PCE of devices with a p-doped MoS2-based HTL is increased from similar to 2.8 to similar to 3.4%. Particularly, after n-doping the PCE was dramatically increased due to the change in work-function compared with un-doped MoS2 thin-films.
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