期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 1, 期 1, 页码 101-113出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2tc00378c
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资金
- NSF-STC program [DMR-0120967]
- AFOSR program [FA9550-09-1-0426]
- NESAC/BIO (University of Washington) under NIH [EB-002027]
- U.S. Department of Energy, Division of Materials Science and Division of Chemical Sciences
- World Class University (WCU) program through the National Research Foundation of Korea under the Ministry of Education, Science and Technology [R31-10035]
- NATIONAL INSTITUTE OF BIOMEDICAL IMAGING AND BIOENGINEERING [P41EB002027] Funding Source: NIH RePORTER
A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl-and phenyl-terminated alkyl similar to(CH2)(12) PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm(2) V-1 s(-1). It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm(2) V-1 s(-1) or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed.
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