期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 1, 期 43, 页码 7222-7227出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc31161a
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资金
- Intel Corporation [4606175]
- Welch Foundation [AT-0041]
- NSF-IUCRC Center for Energy Harvesting Materials and Systems (CEHMS) [IIP-1035024]
- US Air Force Office of Scientific Research [FA9550-09-1-0384]
- University of Texas at Dallas
Ultra low dielectric constant (k = 1.53) materials with self-cleansing properties were synthesized via incorporation of fluorodecyl-polyhedral oligomeric silsesquioxane (FD-POSS) into recently synthesized perfluorocyclopentenyl (PFCP) aryl ether polymers. Incorporation of fluorine rich, high free volume, and low surface energy POSS into a semifluorinated PFCP polymer matrix at various weight percentages resulted in a dramatic drop in dielectric constant, as well as a significant increase in hydrophobicity and oleophobicity of the system. These ultra-low dielectric self-cleansing materials (theta(tilt) = 38 degrees) were fabricated into electrospun mats from a solvent blend of fluorinated FD-POSS with PFCP polymers.
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