期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 1, 期 14, 页码 2548-2552出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3tc30145a
关键词
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资金
- NSFC [61076114]
- Innovation Program of Shanghai Municipal Education Commission
- SRFDP [20100071120027]
- National Science and Technology Major Project [2011ZX02707]
Reduced graphene oxide nano-bridges and tunable electrical transport properties of reduced graphene oxide based transistors are achieved by using tip-based nanolithography. The polarity dependence of the reduction is revealed with a threshold reduction bias of -6 V on the nano-scale tip. The best carrier mobilities up to now for holes and for electrons in reduced-graphene-oxide-based nano-scale transistors are about 5.6 cm(2) V-1 s(-1) and 3.2 cm(2) V-1 s(-1) at room temperature. Moreover, the tunable output and transport properties have been realized for the first time by the controlled nano-tip electrochemical reaction with different reduction nano-tip biases. These tunable electrical properties of graphene based transistors will be extended to develop various novel optoelectronic and microelectronic applications. It opens a possible way to mass production of a graphene oxide based device, representing a significant step forward for electrical applications.
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