期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 1, 期 1, 页码 131-137出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2tc00055e
关键词
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资金
- National Natural Science Foundation [91123008, 51002059, 21001046]
- 973 Program of China [2011CBA00703, 2011CB933300]
- Program for New Century Excellent Talents of the University in China [NCET-11-0179]
- Research Fund for the Doctoral Program of Higher Education [20100142120053]
- Natural Science Foundation of Hubei Province [2011CDB035]
The ternary oxides, Zn2GeO4 and In2Ge2O7 nanowires, are promising n-type semiconductors with outstanding transport properties for high performance electronic devices. By using the direct contact printing process, we reported the assembly of horizontally aligned Zn2GeO4 and In2Ge2O7 nanowire arrays to be used as building blocks for high performance multi-channel field-effect transistors. The as-fabricated multi-channel transistors exhibited higher voltage stability and repeatability than their single nanowire based counterparts. The effective mobilities of the multi-channel field-effect transistors were calculated to be 25.44 cm(2) V-1 s(-1) and 11.9 cm(2) V-1 s(-1), comparable to the single-channel FETs. The as-fabricated multi-channel transistors were also used as high performance photodetectors, exhibited a high sensitivity to ultraviolet light illumination with a photoconductive gain and quantum efficiency as high as 1.034 x 10(5) and 1.032 x 10(7)% for Zn2GeO4 nanowires and 2.58 x 10(5) and 2.617 x 10(7)% for In2Ge2O7 nanowires.
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