4.6 Article

Carboxylate substitution position influencing polymer properties and enabling non-fullerene organic solar cells with high open circuit voltage and low voltage loss

期刊

JOURNAL OF MATERIALS CHEMISTRY A
卷 6, 期 35, 页码 16874-16881

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ta04935a

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资金

  1. National Basic Research Program of China (973 Program) [2013CB834701, 2014CB643501]
  2. ShenZhen Technology and Innovation Commission [JCYJ20170413173814007]
  3. Hong Kong Research Grants Council [T23-407/13 N, N_HKUST623/13, 16305915, 16322416, 606012, 16303917]
  4. HK JEBN Limited
  5. HKUST president's office (Project FP201)
  6. National Science Foundation of China [21374090]
  7. Ministry of Science and Technology of China [2016YFA0200700]
  8. NSFC [21504066]
  9. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]

向作者/读者索取更多资源

To minimize the voltage loss of non-fullerene organic solar cells (OSCs), it is important to modulate the energy levels of active materials and thus the photovoltage of the device. In this paper, we report a simple and effective approach to tune the energy levels of a state-of-the-art polymer P3TEA by switching the position of alkyl side chains and carboxylate substituents on the polymer backbone. The resulting polymer P3TAE exhibits a deep highest occupied molecular orbital (HOMO) level, contributing to a high open circuit voltage (V-OC) of 1.20 V and a small voltage loss of 0.54 V when it is blended with a small molecule acceptor (SMA) FTTB-PDI4. Despite a small charge separation driving force, the P3TAE:FTTB-PDI4 blend exhibits efficient charge extraction, supported by relatively high external quantum efficiency (EQE) (approximate to 60%) in the corresponding device. In addition, the P3TAE:FTTB-PDI4 blend shows relatively high electron mobility and domain purity, leading to a high fill factor (FF) in the device. As a result, the P3TAE:FTTB-PDI4-based solar cell exhibits a power conversion efficiency (PCE) of 8.10%, which is one of the highest achieved performances for single-junction OSCs with V-OC higher than 1.20 V.

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