4.5 Article

Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2012.2183740

关键词

Broadband terahertz (THz) source; frequency multiplier; frequency tripler; local oscillator; planar diode; power-combining; Schottky diode; THz; varactor

资金

  1. National Aeronautics and Space Administration under a contract, at the Universite Pierre et Marie Curie-Paris 6
  2. National Aeronautics and Space Administration at the Observatoire de Paris, France
  3. NASA Astrophysics Research and Analysis Program (APRA), Universite Pierre et Marie Curie
  4. Centre National d'Etudes Spatiales

向作者/读者索取更多资源

We report on the design, fabrication and test of an all-solid-state, frequency agile source that produces over 1 mu W (-30 dBm) across the 2.48-2.75 THz band at room temperature. This frequency-multiplied source is driven by a W-band synthesizer followed by a power amplifier that delivers 350-450 mW (25.5-26.5 dBm) and a cascade of three balanced frequency triplers. The first stage tripler is based on four power-combined six-anode GaAs Schottky diode devices, and the second stage tripler is based on two four-anode GaAs devices. The output tripler uses a single unbiased device featuring two anodes monolithically integrated onto a thin GaAs membrane. The source delivers a record 18 mu W (-17.5 dBm) at 2.58 THz at room temperature. This frequency multiplied source is analyzed with a Fourier transform spectrometer (FTS) and the unwanted harmonics are found to be at least 29 dB below the desired signal. This source, when used as the local oscillator for a hot-electron bolometer mixer, will enable heterodyne instruments for future space missions to map the cosmologically-important 2.675 THz HD molecular line.

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