期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 4, 期 1, 页码 493-497出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2013.2279336
关键词
Direct wafer bonding; multijunction cells
资金
- U.S. government
Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun V-oc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10x concentration to a maximum value close to 41%.
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