期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 4, 期 6, 页码 1683-1689出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2014.2351619
关键词
Grid design; photovoltaic cells; semiconductor device modeling; III-V on Si; III-V semiconductor materials
资金
- Institute for Critical Technology and Applied Sciences, Virginia Tech.
We have investigated the concentrated photovoltaic performance of metamorphic monolithic InGaP/GaAs dual-junction (2-J) solar cells on Si substrate under AM1.5d spectrum using finite-element analysis. The current-matching condition between each subcell was realized for threading dislocation density varying from 10(5) to 10(7) cm(-2), emanating from the mismatch between GaAs and Si substrate. Through comprehensive cell design and by mitigating the losses due to shadowing effect and series resistance, we present an optimal cell design for harnessing the maximum potential of 2-J InGaP/GaAs cell integrated on Si substrate for concentrated photovoltaics. The optimization of front grid spacing and sheet resistance of the window layer were the key design parameters taken into consideration for extending the peak performance toward higher concentrations. Finally, we present an optimized 2-J InGaP/GaAs cell design on Si, which exhibited a theoretical conversion efficiency of 33.11% at 600 suns at a realistic TDD of 106 cm(-2), indicating a promising future for integrating III-V cell technology on Si for low-cost concentrated photovoltaics.
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