期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 3, 期 1, 页码 446-450出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2219501
关键词
Diode; energy conversion; inorganic compound; photovoltaic cells; thin-film devices
资金
- New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning under the Korean government Ministry of Knowledge Economy Grant [20093020010030]
Cu(In,Ga)(Se,S)(2) (CIGSS) absorbers with thicknesses from 1.9 to 0.25 mu m have been grown using a three-step selenization/Ar-anneal/sulfization reaction of Cu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 mu m and lateral compositional nonuniformity, V-OC and fill factor were nearly sustained, while J(SC) decreased due to incomplete absorption. With the 0.25-mu m-thick absorber layer, an efficiency of 9.1% (without AR coating) with V-OC = 612 mV, J(SC) = 21.0 mA/cm(2), and FF = 71.1% was obtained.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据