4.5 Article

Kesterite Successes, Ongoing Work, and Challenges: A Perspective From Vacuum Deposition

期刊

IEEE JOURNAL OF PHOTOVOLTAICS
卷 3, 期 1, 页码 439-445

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2215842

关键词

Cu2ZnSnS4 (CZTS); earth; kesterite; photovoltaic; thin film

资金

  1. Alliance for Sustainable Energy, LLC [DE-AC36-08GO28308]
  2. U.S. Department of Energy
  3. California NanoSystem Institute

向作者/读者索取更多资源

Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of mid-gap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.

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