期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 3, 期 1, 页码 528-534出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2213073
关键词
III-V semiconductor materials; charge carrier lifetime; photovoltaic cells; semiconductor device modeling
资金
- Institute for Critical Technology and Applied Sciences, Virginia Tech, Blacksburg
We investigate the impact of threading dislocation densities on the photovoltaic performance of single-junction (1J) n(+)/p GaAs and dual-junction (2J) n(+)/p InGaP/GaAs solar cells on Si substrate. Using our calibrated model, simulation predicts an efficiency of greater than 23% for a 1J GaAs cell on Si at AM1.5G spectrum at a threading dislocation density of 10(6) cm(-2). The design of a metamorphic 2J InGaP/GaAs solar cell on Si was optimized by tailoring the 2J cell structure on Si to achieve current matching between the subcells, taking into account a threading dislocation density of 10(6) cm(-2). Finally, we present a novel and an optimized 2J InGaP/GaAs solar cell design on Si at a threading dislocation density of 10(6) cm(-2), which exhibited a theoretical conversion efficiency of greater than 29% at AM1.5G spectrum, indicating a path for viable III-V multijunction cell technology on Si.
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