期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 3, 期 1, 页码 206-211出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2217113
关键词
Aluminum-boron codoping; aluminum-boron paste; coalloying; silicon solar cells
资金
- Reiner-Lemoine-Stiftung
We present a detailed study on alloying from screen-printed aluminum pastes containing boron additives (Al-B pastes) to further enhance the efficiency of p- and n-type silicon solar cells with an Al-alloyed back-surface field and rear emitter, respectively. Due to the high B solubility in Si, the additional incorporation of B atoms as acceptors into the Al-alloyed p(+) region-referred to as Al-B codoping of Si-provides improved shielding of electrons from the recombination-active surface. Thus, alloying from Al-B pastes allows for significantly thinner p(+) regions and leads to a considerable reduction of the p(+) saturation current densities. By comparing surface-passivated p(+) regions alloyed from Al-B pastes or conventional Al pastes with each other, we show that a highly recombination-active defect limits the minority carrier lifetime in these p(+) regions. We demonstrate that the acceptor concentration profiles of the p(+) regions can easily be modified by adding different amounts of aluminum diboride or boron trioxide as B sources to the Al pastes.
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