期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 2, 期 3, 页码 269-275出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2012.2189047
关键词
InAs coverage; InAs/GaAs; nanostructured solar cells; quantum dots (QDs); strain balance; strain compensation; superlattice
资金
- U.S. Government, the National Science Foundation [DMR-0955752]
- Department of Energy [DE-FG36-08GO18012]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0955752] Funding Source: National Science Foundation
Ten-, 20-, and 40-layer InAs/GaAs quantum-dot (QD)-embedded superlattice solar cells were compared with a baseline GaAs p-i-n solar cell. Proper strain balancing and a reduction of InAs coverage value in the superlattice region of the QD embedded devices enabled the systematic increase in short-circuit current density with QD layers (0.02-mA/cm(2)/QD layer) with minimal open-circuit voltage loss (similar to 50 mV). The improvement in voltage was found to be due to a reduced nonradiative recombination resulting from a reduced density of larger defective QDs and effective strain management. The 40-layer device exceeded the baseline GaAs cell by 0.5% absolute efficiency improving efficiency relative to the baseline by 3.6%.
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