期刊
APL MATERIALS
卷 3, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4905932
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资金
- NSF [ECCS-1232067, CBET-1336134]
- Iowa Energy Center
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [1336134] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1232067] Funding Source: National Science Foundation
Photovoltaic devices with perovskite materials as light absorbing material were fabricated through sequential vapor deposition of lead iodide and methylammonium iodide with undoped poly3hexylthiophene (P3HT) as a hole transporting layer. The sequential vapor deposition process produced films and devices with the large grains and low defect densities, very small values of dark current, and high open circuit voltages. The thickness of the P3HT layer was a critical parameter for achieving high solar conversion efficiencies of 13.7%. The vapor deposition process also produced devices with a tight distribution of performance characteristics and very high open circuit voltages (0.99 V). (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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