期刊
ECS SOLID STATE LETTERS
卷 3, 期 8, 页码 P94-P98出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0051408ssl
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea(NRF) - Ministry of Education, Science and Technology [20120003724]
Tin oxide thin films are of great interest for device applications, but in spite of their good optical transparency and outstanding semiconductor properties, stable p-type tin oxide needs to be developed. In this study both p-type SnO and n-type SnO2 thin films were deposited by reactive rf magnetron sputtering using Sn target in Ar and O-2 gas mixture. The structural, electrical, and optical properties of both p-type SnO and n-type SnO2 thin films were analysed. The transparent homo-junction pn diode was also fabricated and it showed a fairly good rectification behavior with a turn-on voltage of 2.3 V. (C) 2014 The Electrochemical Society.
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