Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process

Top-gate Al-In-Zn-O (AIZO) thin-film transistors (TFTs) were fabricated using solution process and their device characteristics were demonstrated. The mu(sat), SS, and on/off ratio of the AIZO TFT post-annealed at 250 degrees C were approximately 0.66 cm(2) V-1 s(-1), 0.24 V/dec, and 2.1 x 10(7). Slight negative shifts in turn on voltage were observed as small as 0.2 and 0.5 V under positive and negative-bias stress tests, respectively. Al incorporation into the IZO channel had important impacts on the annealing process optimization at lower temperature and highly-stable TFT performances. (C) 2014 The Electrochemical Society. All rights reserved.