Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

We demonstrate an additive ink-jet process to fabricate homogeneous CdS semiconductor films for thin film transistors (TFTs). This process combines in-situ synthesis with ink-jet printing at a maximum processing temperature of 250 degrees C. The solvent in the reaction is used to dissolve the cadmium and sulfur precursors. The reaction to form the CdS films takes place in a solid-state mode. This method does not require preliminary nanoparticles synthesis or organic stabilizers and results in film with near zero precursor waste. TFTs with mobilities of 7.5 x 10(-2) cm(2)/V . s, threshold voltage (V-T) of 3.4 V and on/off current ratio of 8 x 10(4) were demonstrated. (c) 2013 The Electrochemical Society. All rights reserved.