期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 7, 期 8, 页码 Q148-Q151出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0211808jss
关键词
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资金
- New & Renewable Energy Core Technology Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry Energy, Korea [20173010012970, 20172010104830]
Monoclinic beta-Ga2O3 with an ultra-wide energy bandgap of similar to 4.9 eV has facile cleavage planes because of the high anisotropy in the lattice structure. An exfoliated nanolayer flake of beta-Ga2O3 can be used as an active channel layer in nanoelectronics. However, the mechanical exfoliation method used poses a fundamental issue in that the separated individual layer has a random thickness, which makes it challenging to obtain reproducible device performance. In our study, we demonstrated a photo-enhanced chemical etching technique to control the thickness of exfoliated beta-Ga2O3 nanolayers, enabling us to adjust the threshold voltage of field-effect transistors (FETs) based on these nanolayers. Thickness-dependent device characteristics (threshold voltage, subthreshold swing, on/off ratio, and field-effect mobility) of the back-gated FETs were investigated as a function of the active channel layer (beta-Ga2O3) thickness achieved by the photo-enhanced H3PO4 etching. Our study paves the way for the implementation of exfoliated beta-Ga2O3 nanolayers in nanoelectronics. (C) 2018 The Electrochemical Society.
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