期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 4, 期 1, 页码 N3058-N3064出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0071501jss
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This paper reviews the mechanical and fracture properties of porous ultralow-k dielectrics with the focus on chip package interaction related issues. It is shown that the mechanical and fracture properties of porous ultralow-k dielectric films are closely linked with porosity, pore morphology, network structure and deposition technology, while their fracture properties are also sensitive to reactive species in the environment. The survivability of low-k dielectrics upon integration, package assembly and subsequent reliability tests is therefore a combination of their mechanical stability, fracture properties, the specific mechanical or thermo-mechanical load and environmental effects. (C) The Author(s) 2014. Published by ECS. All rights reserved.
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