4H-SiC Homoepitaxial Growth on Substrate with Vicinal Off-Angle Lower than 1°

We investigated homoepitaxial growth on 4H-SiC Si-face substrate with a vicinal off-angle lower than 1 degrees. The control of the wafer off-angle to a precision of 0.1 degrees is important to controlling the surface morphology of homoepitaxial growth on this substrate. Keeping the C/Si ratio low by controlling the SiH4 flow rate was effective in striking balance between surface morphology and polytype homogeneity. Homoepitaxial layers were successfully grown on whole, 2-inch Si-face vicinal off-angled substrate without large step bunching or polytype inclusions. The quality of the epitaxial layer was confirmed by I-V characteristics of Schottky barrier diodes fabricated on the epitaxial wafer. (C) 2013 The Electrochemical Society. All rights reserved.