Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition

The influence of rapid thermal annealing on structural, luminescent, and electrical properties of Al-doped ZnO film grown by atomic layer deposition is investigated. The (100) diffraction peaks show a systematic shift to higher 2 theta values for the samples annealed in the temperatures of 400-700 degrees C. The photoluminescence spectra reveal that the UV emission intensity slightly decreases as the annealing temperature increases up to 600 degrees C and then increases significantly after the film is annealed in the temperature range of 700 similar to 800 degrees C. In addition, the resistivity of the film increases gradually with elevated annealing temperature, which is attributed to the decrease of the carrier concentration and mobility. (C) 2012 The Electrochemical Society. All rights reserved.