期刊
ADVANCED ELECTRONIC MATERIALS
卷 1, 期 7, 页码 -出版社
WILEY-BLACKWELL
DOI: 10.1002/aelm.201500146
关键词
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资金
- Office of Naval Research [MURI N00014-11-1-0690]
- Materials Research Center of Northwestern University [NSF-MRSEC DMR-1121262]
- NSF-MRSEC program at the MRC-NU [DMR-1121262]
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Northwestern University
- NSF [TG-DMR080007]
The nature of charge transport and local structure are investigated in amorphous indium oxide-based thin films fabricated by spin-coating. The In-X-O series where X = Sc, Y, or La is investigated to understand the effects of varying both the X cation ionic radius (0.89-1.17 angstrom) and the film processing temperature (250-300 degrees C). Larger cations in particular are found to be very effective amorphosizers and enable the study of high mobility (up to 9.7 cm(2) V-1 s(-1)) amorphous oxide semiconductors without complex processing. Electron mobilities as a function of temperature and gate voltage are measured in thin-film transistors, while X-ray absorption spectroscopy and ab initio molecular dynamics simulations are used to probe local atomic structure. It is found that trap-limited conduction and percolation-type conduction mechanisms convincingly model transport for low-and high-temperature processed films, respectively. Increased cation size leads to increased broadening of the tail states (10-23 meV) and increased percolation barrier heights (24-55 meV) in the two cases. For the first time in the amorphous In-X-O system, such effects can be explained by local structural changes in the films, including decreased In-O and In-M (M = In, X) coordination numbers, increased bond length disorder, and changes in the MOx polyhedra interconnectivity.
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