Fully Inkjet-Printed Transparent Oxide Thin Film Transistors Using a Fugitive Wettability Switch

Inkjetted transparent metal-oxide-based transistors that consist of an inkjetted bottom antimony-doped tin oxide (ATO) gate electrode, an inkjetted ZrO2 insulator, an inkjetted ATO source/drain electrode, and an inkjetted SnO2 semiconductor are reported. The devices exhibit excellent electrical characteristics and deliver a saturation mobility of approximate to 11 cm(2) V-1 s, a 10(6) on/off ratio, and a 0.18 V/decade sub-threshold slope while operating at low voltage (<5.0 V).