3D-Stacked Vertical Channel Nonvolatile Polymer Memory

A 3D-stacked one transistor memory with vertically defined submicrometer channels is realized by carefully designing device architecture involving repetitive deposition of layers in combination with a one-step bilayer transfer of a ferroelectric layer and a semiconducting one. The devices represent a milestone in the realization of mechanically flexible, one-transistor polymer memory with high memory performance.