期刊
ADVANCED ELECTRONIC MATERIALS
卷 1, 期 1-2, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201400042
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资金
- Samsung Research Funding Center of Samsung Electronics [SRFC-MA1301-03]
- National Research Foundation of Korea (NRF) - Korean government (MEST) [2014R1A2A1A01005046]
A 3D-stacked one transistor memory with vertically defined submicrometer channels is realized by carefully designing device architecture involving repetitive deposition of layers in combination with a one-step bilayer transfer of a ferroelectric layer and a semiconducting one. The devices represent a milestone in the realization of mechanically flexible, one-transistor polymer memory with high memory performance.
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