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Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

期刊

ADVANCED OPTICAL MATERIALS
卷 7, 期 1, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201800441

关键词

2D materials; heterostructures; photodetectors; synthesis techniques

资金

  1. 973 grant of MOST [2013CBA01604]
  2. NSFC [61625401, 61574101, 61704051, U1632156]
  3. Hubei Province Natural Science Foundation [2016CFA028]
  4. Natural Science Foundation of Hunan Province [2017RS3021, 2017JJ3033]
  5. Ten Thousand Talents Program for Young Talents

向作者/读者索取更多资源

2D materials, such as graphene, transition metal dichalcogenides, and black phosphorus, have become the most potential semiconductor materials in the field of optoelectronic devices due to their extraordinary properties. Owing to the layer-dependent and appropriately sized bandgaps, photodetectors based on various 2D materials are designed and manufactured rationally. Utilizing the unique properties of 2D materials, many surprising physical phenomena of junctions based on 2D materials can be obtained after different 2D materials are stacked together. This makes heterojunctions more popular than 2D materials themselves, and the design of 2D materials for human beings is easier than ever. In this review, recent progress in optoelectronic applications based on 2D materials and their heterojunctions is summarized and discussed.

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