期刊
2D MATERIALS
卷 2, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/2/3/032003
关键词
modeling and simulation; stacked 2D materials; stacked 2D material devices
资金
- NSF [DMR-1410636]
- Extreme Science and Engineering Discovery Environment (XSEDE) [TG-DMR130038, TG-DMR140003]
- Texas AM University
Tremendous developments in the synthesis and understanding of two-dimensional materials such as graphene, phosphorene, BNand MoS2 have spurred great interest in exploiting their heterostructures in devices. Here, we present a compact review of the modeling and simulation of stacked two-dimensional materials and devices. Particular emphasis is placed on the intriguing phenomena enabled by different stacking geometries and material choices, and the fundamental physical mechanisms behind them, which enable new device concepts and applications to be developed which would have been difficult to achieve with other material platforms.
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